Plasma and process modeling - Part II
27 June 2017
02. Plasma and process modeling
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S02.2
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16:40
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18:20
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Plasma and process modeling - Part II
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Thalie room
02. Plasma and process modeling
16:10
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S02.2-1O061
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A complete simulation of deep Silicon etching using Bosch process
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G.
Guillaume
Le Dain
16:30
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S02.2-2O081
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Lumped Circuit Model for Radio Frequency Magnetron Discharges
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D.
Dennis
Engel
16:50
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S02.2-3O091
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A study of the oxygen dynamics in a reactive Ar/O2 high power impulse magnetron sputtering discharge using an ionization region model
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T.
Tiberiu
MINEA
17:10
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S02.2-4O095
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Model based optimization of the film thickness homogeneity in sputter processes
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A.
Andreas
Pflug
17:30
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S02.2-5O097
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2D PIC-MCC modeling of HiPIMS plasma including sputtered particles
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A.
Adrien
Revel
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